V982E
Knox Semiconductor Inc
ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODESULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES V907 - V900 V907E - V900E
PART NUMBER V907 V910 V912 V915 V920 V927 V933 V939 V947 V956 V968 V982 V900 V907E V910E V912E V915E V920E V927E V933E V939E V947E V956E V968E V982E V900E
CAPACITANCE @ 4 Vdc 1 MHz (pF) 7 10
V982
ULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODESULTRA-LOW LEAKAGE ABRUPT VARACTOR DIODES V907 - V900 V907E - V900E
PART NUMBER V907 V910 V912 V915 V920 V927 V933 V939 V947 V956 V968 V982 V900 V907E V910E V912E V915E V920E V927E V933E V939E V947E V956E V968E V982E V900E
CAPACITANCE @ 4 Vdc 1 MHz (pF) 7 10 12 15 20 27 33 39 47 56 68 82 100 7 10 1
Knox Semiconductor Inc
PDF
V9801
High-performance low-power single-phase metering SoC chipV9801 数据手册
V1.0
杭州万工科技有限公司 Vango Technologies, Inc.
中国·浙江·杭州市 滨江区丹枫路 788 号海越大厦 9 楼 9/F, Haiyue Building, 788 Danfeng Road, Binjiang District, Hangzhou, Zhejiang,
P.R. China, 310051 电话(Tel):86-571-88157065 传真(Fax)�
Vango Technologies
PDF
V9811
High-performance low-power single-phase metering SoC chipV9811 数据手册
V1.0
杭州万工科技有限公司 Vango Technologies, Inc.
中国·浙江·杭州市 滨江区丹枫路 788 号海越大厦 9 楼 9/F, Haiyue Building, 788 Danfeng Road, Binjiang District, Hangzhou, Zhejiang,
P.R. China, 310051 电话(Tel):86-571-88157065 传真(Fax)�
Vango Technologies
PDF