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Datasheet V60D100CHM3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 V60D100CHM3   Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV)
Vishay
Vishay
datasheet V60D100CHM3 pdf

V60D100C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
V60D100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60D100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series SMPD K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technol
Vishay
Vishay
datasheet pdf - Vishay
V60D100C-M3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARA
Vishay
Vishay
datasheet pdf - Vishay
V60D100CHM3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARA
Vishay
Vishay
datasheet pdf - Vishay


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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