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Datasheet V40D100CHM3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 V40D100CHM3   Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40D100C-M3, V40D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV)
Vishay
Vishay
datasheet V40D100CHM3 pdf

V40D100C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
V40D100C-M3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40D100C-M3, V40D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARA
Vishay
Vishay
datasheet pdf - Vishay
V40D100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40D100C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.40 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® eSMP® Series SMPD K FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for
Vishay
Vishay
datasheet pdf - Vishay
V40D100CHM3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40D100C-M3, V40D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARA
Vishay
Vishay
datasheet pdf - Vishay


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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