UTD484
Unisonic Technologies
N-CHANNEL MOSFETUNISONIC TECHNOLOGIES CO., LTD
UTD484
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for
UTD410
N-CHANNEL ENHANCEMENT MODEUNISONIC TECHNOLOGIES CO., LTD UTD410
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
1 SOT-223
Power MOSFET
The UTD410 can prov ide excellent R DS(ON) and low g ate charge b y us ing adva nced tr ench tech nology. T his UTD410 is suitable for using as a load switch or in PWM applications.
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UNISONIC TECHNOLOGIES
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UTD413
P-CHANNEL MOSFETUNISONIC TECHNOLOGIES CO., LTD
UTD413
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252
Unisonic Technologies
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