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UNISONIC TECHNOLOGIES CO., LTD UT4435-H Preliminary -8.0A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state resistance. The UTC
UNISONIC TECHNOLOGIES CO., LTD UT4430 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION Power MOSFET The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-si
UNISONIC TECHNOLOGIES CO., LTD UT4410 N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION Power MOSFET As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and ma
UNISONIC TECHNOLOGIES CO., LTD UT4406 N-CHANNEL ENHANCEMENT MODE DESCRIPTION Power MOSFET The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC’s advanced trench technology which makes an excellent high side switch for notebook
UNISONIC TECHNOLOGIES CO., LTD UT4435 30V P-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION Power MOSFET The UT4422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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