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Datasheet US60A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1US60ARECTIFIERS ASSEMBLIES

Microsemi Corporation
Microsemi Corporation
rectifier


US6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1US60ARECTIFIERS ASSEMBLIES

Microsemi Corporation
Microsemi Corporation
rectifier
2US6J11Pch -12V -1.3A Power MOSFET

US6J11 Pch -12V -1.3A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD -12V 260mW -1.3A 1.0W lOutline TUMT6 SOT-363T (6) (5) (4) (1) (2) (3) lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). 5) Pb-free lead plating ; RoH
ROHM Semiconductor
ROHM Semiconductor
mosfet
3US6K12.5V Drive Nch+Nch MOS FET

US6K1 Transistors 2.5V Drive Nch+Nch MOS FET US6K1 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) ÌËÓÌê îòð ïòí ðòêë ðòêë øê÷ øë÷ øì÷ ð¢ðòï ðòèëÓ¿¨ò ðòéé Features 1) Low On-resistance. 2) Space saving small surface mount package (TU
ROHM Semiconductor
ROHM Semiconductor
data
4US6K24V Drive Nch+Nch MOSFET

US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 2.0 1.3 0.85Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. (6) (5) (4) 0.2 0.65 0.65 0.77 1.7 0.2 (1) (2
ROHM Semiconductor
ROHM Semiconductor
mosfet
5US6K41.8V Drive NchNch MOSFET

US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 zApplications Switching zPackaging specif
ROHM Semiconductor
ROHM Semiconductor
mosfet
6US6KB80RSilicon Bridge Diodes

CAT.No.TJ 536 SILICON BRIDGE DIODES USKB SERIES Summary Bridge diodes are being required to take up less space accompanying the reduced size of electronic equipment. In order to respond to these needs, Shindengen has developed a new package in offering a complete lineup of bridge diodes that can
Shindengen
Shindengen
diode
7US6M14V+2.5V Drive Nch+Nch MOSFET

Transistors US6M1 4V+2.5V Drive Nch+Nch MOSFET US6M1 0.2Max. zStructure Silicon N-channel / P-channel MOSFET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). zApplication Power switching, DC / DC converter. zDimensions (Unit : mm) TUMT6
ROHM Semiconductor
ROHM Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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