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Datasheet UPD6514 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | UPD6514 | 1024 x 4 BIT STATIC CMOS RAM NEe Microcomputers, Inc.
NEe
fL PD444/6514 fL PD444/6514·1 fL PD444/6514·2 fL PD444/6514·3
1024 x 4 BIT STATIC CMOS RAM
OESCR IPTION
The /JPD444/6514 is a high-speed, low power silicon gate CMOS 4096-bit static RAM organized 1024 words by 4 bits_ It uses DC stable (static) circuitry throughou |
NEC |
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3 | UPD6514-1 | 1024 x 4 BIT STATIC CMOS RAM NEe Microcomputers, Inc.
NEe
fL PD444/6514 fL PD444/6514·1 fL PD444/6514·2 fL PD444/6514·3
1024 x 4 BIT STATIC CMOS RAM
OESCR IPTION
The /JPD444/6514 is a high-speed, low power silicon gate CMOS 4096-bit static RAM organized 1024 words by 4 bits_ It uses DC stable (static) circuitry throughou |
NEC |
|
2 | UPD6514-2 | 1024 x 4 BIT STATIC CMOS RAM NEe Microcomputers, Inc.
NEe
fL PD444/6514 fL PD444/6514·1 fL PD444/6514·2 fL PD444/6514·3
1024 x 4 BIT STATIC CMOS RAM
OESCR IPTION
The /JPD444/6514 is a high-speed, low power silicon gate CMOS 4096-bit static RAM organized 1024 words by 4 bits_ It uses DC stable (static) circuitry throughou |
NEC |
|
1 | UPD6514-3 | 1024 x 4 BIT STATIC CMOS RAM NEe Microcomputers, Inc.
NEe
fL PD444/6514 fL PD444/6514·1 fL PD444/6514·2 fL PD444/6514·3
1024 x 4 BIT STATIC CMOS RAM
OESCR IPTION
The /JPD444/6514 is a high-speed, low power silicon gate CMOS 4096-bit static RAM organized 1024 words by 4 bits_ It uses DC stable (static) circuitry throughou |
NEC |
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Número de pieza | Descripción | Fabricantes | |
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