|
PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.
DATA SHEET CMOS INTEGRATED CIRCUIT µPD5710TK WIDE BAND SPDT SWITCH DESCRIPTION The µPD5710TK is a CMOS MMIC for wide band SPDT (Single Pole Double Throw) switch which were developed for mobile communications, wireless communications and another general-purpose RF switching application. This devi
DATA SHEET CMOS INTEGRATED CIRCUIT µPD5710TK WIDE BAND SPDT SWITCH DESCRIPTION The µPD5710TK is a CMOS MMIC for wide band SPDT (Single Pole Double Throw) switch which were developed for mobile communications, wireless communications and another general-purpose RF switching application. This devi
DATA SHEET CMOS INTEGRATED CIRCUIT μPD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequen
DATA SHEET CMOS INTEGRATED CIRCUIT µPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range • High isolation D/U ratio • Insertion loss • Insertion loss f
PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |