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DATA SHEET MOS INTEGRATED CIRCUIT µPD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-t
DATA SHEET MOS INTEGRATED CIRCUIT µPD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444008L is packaged in 36-pin PLASTIC SOJ.
DATA SHEET MOS INTEGRATED CIRCUIT µPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444004L is packaged in a 32-pin PLASTIC SOJ
DATA SHEET MOS INTEGRATED CIRCUIT µPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444004 is packaged in a 32-pin PLASTIC SOJ.
DATA SHEET MOS INTEGRATED CIRCUIT µPD444001 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444001 is packaged in 32-pin PLASTIC SOJ. Fea
PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The
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PartNumber.co.kr | 2020 | 연락처 |