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UPD444-2 전자부품 데이터시트



UPD444-2 전자부품 회로 및
기능 검색 결과



UPD444-2  

NEC
NEC

UPD444-2

1024 x 4-Bit Static CMOS RAM





관련 부품 UPD444 상세설명

UPD4443362  

  
4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE

DATA SHEET MOS INTEGRATED CIRCUIT µPD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-t



NEC
NEC

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UPD444008L  

  
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444008L is packaged in 36-pin PLASTIC SOJ.



NEC
NEC

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UPD444004L  

  
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444004L is packaged in a 32-pin PLASTIC SOJ



NEC
NEC

PDF



UPD444004  

  
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444004 is packaged in a 32-pin PLASTIC SOJ.



NEC
NEC

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UPD444001  

  
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD444001 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444001 is packaged in 32-pin PLASTIC SOJ. Fea



NEC
NEC

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UPD444016-Y  

  
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The



NEC
NEC

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