Datasheet UPD4164-1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	UPD4164-1	65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR IPTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bi	NEC

UPD416 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
UPD416	16K x 1-Bit DYNAMIC NMOS RAM NEe Microcomputers, Inc. 18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. PD416·1 f' PD416·2 f'PD416·3 J.L PD416·5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM. It is designed for memory applications where very low cost and large bit	NEC
UPD4164-2	65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR IPTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-	NEC
UPD4168	8192 x 8 Bit NMOS XRAM w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D at h S a t e e 4U . m o c	NEC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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