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Datasheet UPD4164 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | UPD4164 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
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DESCR IPTI ON
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bi |
 NEC |
 |
| 3 | UPD4164-1 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
~rn~[m~~~illrnw
DESCR IPTI ON
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bi |
NEC |
|
| 2 | UPD4164-2 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
~rn~[m~~~illrnw
DESCR IPTI ON
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bi |
NEC |
|
| 1 | UPD4164-3 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
~rn~[m~~~illrnw
DESCR IPTI ON
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bi |
NEC |
|
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