UPA814TC
NEC
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDDATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA814TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE
UPA814TF
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high HIGH COLLECTOR CURRENT: IC MAX = 100 mA
0.65 2.0 ± 0.2 1.3 2 1
UPA814TF
OUTLINE DIMENSIONS (Units in mm)
PACK
NEC
PDF
UPA814T
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 9 GHz HIGH COLLECTOR CURRENT: 100 mA
0.65 2.0 ± 0.2 1.3 2 1
UPA814T
OUTLINE DIMENSI
CEL
PDF
UPA814
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDDATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA814TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB
NEC
PDF