UPA810T
CEL
NPN SILICON HIGH FREQUENCY TRANSISTORPRELIMINARY DATA SHEET
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
• HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
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UPA810TC
NEC
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDDATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA810TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The µPA810TC has built-in low-voltage two transistors which are designed to amplif