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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA622TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is s
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA678TB P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics,
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this d
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA650TT is a switching device, which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is
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