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UPA68H 전자부품 데이터시트



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UPA68H  

NEC
NEC

UPA68H

N-Channel Silicon Dual Junction FET





관련 부품 UPA6 상세설명

UPA675T  

  
N-Channel MOS Field Effect Transistor

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal



NEC
NEC

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UPA622TT  

  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA622TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is s



Renesas
Renesas

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UPA678TB  

  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA678TB P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics,



NEC
NEC

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UPA677TB  

  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this d



Renesas
Renesas

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UPA677TB  

  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and



NEC
NEC

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UPA650TT  

  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA650TT is a switching device, which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is



Renesas
Renesas

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