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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA573T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 –0 0.15 +0.1
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 –0 0.15 +0.1
DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistan
DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistan
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA502T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The µPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 0.65+0.1 –0.15 0.16+0.1
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