UPA2454 전자부품 데이터시트

μ PA2462T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0187EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2462T1Q features a low on-state resistance and excellent switching characteristic

μ PA2465T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0190EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2465T1Q features a low on-state resistance and excellent switching characteristic

μ PA2464T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0189EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2464T1Q features a low on-state resistance and excellent switching characteristic

μ PA2461T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0186EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2461T1Q features a low on-state resistance and excellent switching characteristic

μ PA2460T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0185EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2460T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2460T1Q features a low on-state resistance and excellent switching characteristic

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 0.5±0.1 0.5±0.1 DESCRIPTION The µ PA2452 is a switching device which can be driven directly by a 2.5 V power source. This µ PA2452 features a