|
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1910 is a switching device which can be driven directly by a 2.5-V power source. The µPA1910 features a low on-state resistance and excellent switching characteristics, and i
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and i
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1911 is a switching device which can be driven directly by a 2.5-V power source. The µPA1911 features a low on-state resistance and excellent switching characteristics, and i
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1915 is a switching device which can be driven directly by a 2.5-V power source. The µPA1915 features a low on-state resistance and excellent switching characteristics, and i
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1912 is a switching device which can be driven directly by a 2.5-V power source. The µPA1912 features a low on-state resistance and excellent switching characteristics, and i
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1914 is a switching device which can be driven directly by a 4 V power source. The µPA1914 features a low on-state resistance and excellent switching characteristics, and is
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |