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Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 2.5±0.1 1.0 For amplification of the low frequency 0.4 1.5 1.5 R0.9 R0.9 1.0±0.1 q 0.85 0.55±0.1 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage UN1231 UN12
Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equip
Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equip
Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equip
Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equip
Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equip
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