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UML5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML5 is Designed for PACKAGE STYLE .280 4L STUD A 45° FEATURES: • • • Omnigold™ Metalization System B D C J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +
UML3 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML3 is Designed for PACKAGE STYLE .280 4L STUD A 45° FEATURES: • • • Omnigold™ Metalization System B D C J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O G H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated Transistor and Diode Features z The 2SC2412K and a diodes are housed independently In a package MARKING:L2 SOT-353 TR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VC
UML1T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML1T is Designed for PACKAGE STYLE TO-39 B C 45° ØA FEATURES: • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.4 A 55 V 30 V 3.5 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC
UML1SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML1SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.0 A 45 V 25 V DIM MINIMUM inches / mm ØC D E F MAXIMUM inches / m
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