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UML1T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML1T is Designed for PACKAGE STYLE TO-39 B C 45° ØA FEATURES: • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.4 A 55 V 30 V 3.5 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC
UML1SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML1SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.0 A 45 V 25 V DIM MINIMUM inches / mm ØC D E F MAXIMUM inches / m
EML11 / UML11N Transistors General purpose transistor (isolated transistor and diode) EML11 / UML11N 2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) EMT5 1.6 0.5 1pin m
UML100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • PG = 7.5 dB Typical at 400 MHz • Internal Input Matching Network • Omnig
UML10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML10 is Designed for PACKAGE STYLE .280 4L STUD A 45° FEATURES: • • • Omnigold™ Metalization System B D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F G H K DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99 K
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