파트넘버.co.kr ULBM35 데이터시트 검색

ULBM35 전자부품 데이터시트



ULBM35 전자부품 회로 및
기능 검색 결과



ULBM35  

Advanced Semiconductor
Advanced Semiconductor

ULBM35

NPN SILICON RF POWER TRANSISTOR

ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FEATURES: • • • Omnigold™ Metalization System FULL R D B G .725/18,42 F E K M L MAXIMUM RATINGS DIM H MINIMUM inches / mm




관련 부품 ULBM 상세설명

ULBM5  

  
NPN SILICON RF POWER TRANSISTOR

ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System 45° B A MAXIMUM RATINGS IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC O D C J 2.0 A 36 V 18 V 36 V 4.0 V 37 W @ TC = 25 OC -65 C to +2



Advanced Semiconductor
Advanced Semiconductor

PDF



ULBM2T  

  
NPN SILICON RF POWER TRANSISTOR

ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC O F 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to +



Advanced Semiconductor
Advanced Semiconductor

PDF



ULBM2SL  

  
NPN SILICON RF POWER TRANSISTOR

ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC = 25 C -65 OC to +20



Advanced Semiconductor
Advanced Semiconductor

PDF



ULBM2  

  
NPN SILICON RF POWER TRANSISTOR

ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System 45° B A D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C



Advanced Semiconductor
Advanced Semiconductor

PDF



ULBM10  

  
NPN SILICON RF POWER TRANSISTOR

ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System B A 45° D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65



Advanced Semiconductor
Advanced Semiconductor

PDF



ULBM45  

  
NPN SILICON RF POWER TRANSISTOR

ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 10.0 A 36



Advanced Semiconductor
Advanced Semiconductor

PDF




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