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ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System 45° B A MAXIMUM RATINGS IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC O D C J 2.0 A 36 V 18 V 36 V 4.0 V 37 W @ TC = 25 OC -65 C to +2
ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC O F 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to +
ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC = 25 C -65 OC to +20
ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System 45° B A D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C
ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalization System B A 45° D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65
ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 10.0 A 36
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PartNumber.co.kr | 2020 | 연락처 |