Datasheet ULBM2SL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ULBM2SL	NPN SILICON RF POWER TRANSISTOR ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC = 25 C -65 OC to +20	Advanced Semiconductor

ULBM Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ULBM45	NPN SILICON RF POWER TRANSISTOR ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T	Advanced Semiconductor
ULBM2TE	NPN SILICON RF POWER TRANSISTOR ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F 0.40 A 36 V 16 V 4.0 V 5 W @ TC = 2	Advanced Semiconductor
ULBM25	NPN SILICON RF POWER TRANSISTOR ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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