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an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units
an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter
-3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Com
an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units
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