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TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and
10A Avg. 600 Volts FRED TSU10B60 INSTANTANEOUS FORWARD CURRENT (A) 50 20 10 5 2 1 0 FORWARD CURRENT VS. VOLTAGE 12 INSTANTANEOUS FORWARD VOLTAGE (V) 3 TSU10B60 Tj=25°C Tj=150°C 4 AVERAGE FORWARD POWER DISSIPATION (W) 0° 180° θ CONDUCTION ANGLE 35 30 25 20 15 10 5 0 0 AVERAGE FORWARD P
TSU101, TSU102, TSU104 Nanopower, rail-to-rail input and output, 5 V CMOS operational amplifiers Datasheet - production data 6&768 627768 ')1[768 0LQL62768 • Application performances guaranteed over industrial temperature range • Fast desaturation Appli
TSU101, TSU102, TSU104 Nanopower, rail-to-rail input and output, 5 V CMOS operational amplifiers Datasheet - production data 6&768 627768 ')1[768 0LQL62768 • Application performances guaranteed over industrial temperature range • Fast desaturation Appli
10A Avg. 600 Volts FRED 110A TSU10A60 INSTANTANEOUS FORWARD CURRENT (A) 50 20 10 5 2 1 0 FORWARD CURRENT VS. VOLTAGE TSU10A60 0° 180° θ CONDUCTION ANGLE 30 AVERAGE FORWARD POWER DISSIPATION (W) Tj=25°C Tj=150°C 25 20 15 10 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 INSTANTANEOUS FORWARD VOLTAGE
TSU101, TSU102, TSU104 Nanopower, rail-to-rail input and output, 5 V CMOS operational amplifiers Datasheet - production data 6&768 627768 ')1[768 0LQL62768 • Application performances guaranteed over industrial temperature range • Fast desaturation Appli
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