TSP8N60M
Truesemi
600V N-Channel MOSFETTSP8N60M/TSF8N60M
600V N-Channel MOSFET
Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability
General Description
This Power MOSFET is produce
TSP8N65M
N-Channel MOSFETTSP8N65M / TSF8N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high en
Truesemi
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