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TSM9966D 20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOT-26 Pin Definition: 1. Gate 1 6. Source 1 2. Drain 5. Drain 3. Gate 2 4. Source 2 ID (A) 6.0 5.2 Features ● Advance ● Trench Process Technology High Density Cell
TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V -20 60 RDS(on) (max) VGS = -2.7V VGS = -2.5V 78 85 Qg 6 Unit V mΩ nC Fea
TSM9933D 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -20 65 @ VGS = -4.5V 100 @ VGS = -2.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -4.7 -3.8 Features Block Diagram ● ● Advance
TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) 6.0 5.2 Features Block Diagram ● ● Advance T
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