Datasheet TSM900N06 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM900N06	N-Channel Power MOSFET / Transistor TO-251S (IPAK SL) SOT-223 TSM900N06 60V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 60 90 100 Qg 9.3 Unit V mΩ nC Ordering Information Part No. Package Packing TSM90	Taiwan Semiconductor

TSM900 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM900N06	N-Channel Power MOSFET / Transistor TO-251S (IPAK SL) SOT-223 TSM900N06 60V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 60 90 100 Qg 9.3 Unit V mΩ nC Ordering Information Part No. Pac	Taiwan Semiconductor
TSM900N10	N-Channel Power MOSFET / Transistor TSM900N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 15A, 90mΩ FEATURES ● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switching ● LED Lighting	Taiwan Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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