Datasheet TSM650P02CX Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM650P02CX	P-Channel Power MOSFET TSM650P02CX 20V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 65 85 130 Qg 6.4 Unit V mΩ nC Features ● Fast switching ● Suited for -1.8V gate drive applicatio	Taiwan Semiconductor

TSM650P0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM650P03CX	P-Channel Power MOSFET TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 10V RDS(on) (max) VGS = -4.5V VGS = -2.5V -30 65 75 100 Qg 8 Unit V mΩ nC Features ● Fast Switching ● Suited for -2.5V Gate	Taiwan Semiconductor
TSM650P02CX	P-Channel Power MOSFET TSM650P02CX 20V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS =- 4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 65 85 130 Qg 6.4 Unit V mΩ nC Features ● Fast switching ● Suited for -1.8V g	Taiwan Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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