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Datasheet TSM60N380 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM60N380   N-Channel Power MOSFET / Transistor

ITO-220 TO-252 (DPAK) TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 600 0.38 20.5 Unit V Ω nC Features ● Super-Junction technology ● High performance due to s
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet TSM60N380 pdf

TSM60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM60NB260

N-Channel Power MOSFET / Transistor

TSM60NB260 Taiwan Semiconductor N-Channel Power MOSFET 600V, 13A, 0.26Ω FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS tested ● High commutation performance ● Pb-free plating
Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM60N06

N-Channel Power MOSFET / Transistor

TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =10V ID (A) 66 Features ● Advanced Trench Technology ● Low RDS(ON) 7.3mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) �
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM60N03

N-Channel Power MOSFET / Transistor

TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V ID (A) 60 Features ● Advanced Trench Technology ● Low RDS(ON) 4.5mΩ (Max.) ● Low gate charge typical @ 12nC (Typ.) �
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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