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Preliminary TSM4872 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 7.5 @ VGS = 10V 10 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 15 13 Features ● ● Advance Trench Process Technology High Density Cell
TSM4835 Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain 30V P-Channel Enhancement Mode MOSFET VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features Advanced trench proces
TO-220 TO-251S (IPAK) TSM480P06 60V P-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -60 48 65 Qg 22.4 Unit V mΩ nC Ordering Information Part No. Package Packing
TSM4806 20V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V 20 20 RDS(on) (max) VGS = 2.5V VGS = 1.8V 25 31 Qg 12.3 Unit V mΩ nC Features ● Advanced High Ce
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