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TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -3.9 -3.2 -2.6 Features ●
TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -3.9 -3.2 -2.6 Features ● ● Advance Trench Process Technology
TSM4431 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 40 @ VGS = -10V 70 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -5.8 -4.5 Features ● ● Advance Trench Process Technology High Density Cell Design
TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Density Cell Design
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