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TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -3.9 -3.2 -2.6 Features ●
TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -3.9 -3.2 -2.6 Features ● ● Advance Trench Process Technology
Preliminary TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 19 @ VGS = 10V 28 @ VGS = 4.5V ID (A) 8.5 6 Features ● ● Advance Trench
Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 26 @ VGS = -20V 35 @ VGS = -10V SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain ID (A) -8.0 -8.0 Features ● ● Advance Trench Process Techn
TSM4414 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 26 @ VGS = 10V 40 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 8.5 5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ult
TSM4410 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ Features Advanced trench process technology Hig
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