Datasheet TSM4414 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM4414	30V N-Channel MOSFET TSM4414 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 26 @ VGS = 10V 40 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 8.5 5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ult	Taiwan Semiconductor Company

TSM4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM4435B	30V P-Channel MOSFET TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Den	Taiwan Semiconductor
TSM4425	30V P-Channel MOSFET 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain TSM4425 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 12 @ VGS = -10V 19 @ VGS = -4.5V ID (A) -11 -8.5 Features ● ● Advance Trench Process	Taiwan Semiconductor Company
TSM480P06	P-Channel Power MOSFET TO-220 TO-251S (IPAK) TSM480P06 60V P-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -60 48 65 Qg 22.4 Unit V mΩ nC Ordering Information Part N	Taiwan Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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