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Datasheet TSM3N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | TSM3N80 | 800V N-Channel Power MOSFET TSM3N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
800
RDS(on)(Ω)
4.2 @ VGS =10V
ID (A)
1.5
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This adva |
 Taiwan Semiconductor |
 |
| 4 | TSM3N80CH | 800V N-Channel Power MOSFET TSM3N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
800
RDS(on)(Ω)
4.2 @ VGS =10V
ID (A)
1.5
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This adva |
Taiwan Semiconductor |
|
| 3 | TSM3N80CI | 800V N-Channel Power MOSFET TSM3N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
800
RDS(on)(Ω)
4.2 @ VGS =10V
ID (A)
1.5
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This adva |
Taiwan Semiconductor |
|
| 2 | TSM3N80CP | 800V N-Channel Power MOSFET TSM3N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
800
RDS(on)(Ω)
4.2 @ VGS =10V
ID (A)
1.5
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This adva |
Taiwan Semiconductor |
|
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