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Datasheet TSM35N03 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM35N03   N-Channel Enhancement Mode MOSFET

TSM35N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS (on), Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Features — — — High Density Cell Design for Ultra Low On-Resistance — Advanced trench proces
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet TSM35N03 pdf

TSM35 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM35N10CP

100V N-Channel Power MOSFET

TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)
Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM35N10

100V N-Channel Power MOSFET

TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)
Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM35N03

N-Channel Enhancement Mode MOSFET

TSM35N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS (on), Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Features — — — High Density Cell Design for Ultra Low On-Resistance — Ad
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company


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Número de pieza Descripción Fabricantes PDF
SPS122

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