Datasheet TSM340N06 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM340N06	N-Channel Power MOSFET / Transistor TO-220 TO-251S (IPAK) TSM340N06 60V N-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 60 34 40 Qg 16.6 Unit V mΩ nC Ordering Information Part No. Package Packing T	Taiwan Semiconductor

TSM340 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM3404	30V N-Channel MOSFET TSM3404 30V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 30 @ VGS = 10V 43 @ VGS = 4.5V ID (A) 5.8 5.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low	Taiwan Semiconductor Company
TSM340N06	N-Channel Power MOSFET / Transistor TO-220 TO-251S (IPAK) TSM340N06 60V N-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 60 34 40 Qg 16.6 Unit V mΩ nC Ordering Information Part No.	Taiwan Semiconductor
TSM3401	-30V P-Channel Enhancement Mode MOSFET TSM3401 Taiwan Semiconductor P-Channel Power MOSFET -30V, -3A, 60mΩ Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low Onresistance ● Pb-free plating ● RoHS compliant ● Halogen-free package Application ● Load Switch ● PA Switch	Taiwan Semiconductor Company

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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