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30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 48 @ VGS = -10V 79 @ VGS = -4.5V TSM3481 SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) -5.3 -4.1 Features ● ● Advance Trench Process Technology High Density Cell Design f
TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 51 @ VGS = 1.8V SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) 5.0 4.5 4.0 Features ● ● Advance Trench Process Technology High Densit
TSM3461CX5 Pin assignment: 1. Drain 5. Drain 2. Drain 3. Gate 4. Source 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =35mΩ (typ.) Features Advanced trench process technology High density cell desi
TSM3460 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Advanced trench process technology High density cel
TSM3457 30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 54 @ VGS = 10V 100 @ VGS = 4.5V ID (A) -5 -3.7 Features ● ● Advance Trench Process Technology High Density Cell Design for
TSM3446 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 33 @ VGS = 4.5V 40 @ VGS = 2.5V SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) 5.3 4.4 Features ● ● Advance Trench Process Technology High Density Cell Design for Ul
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