Datasheet TSM3400 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM3400	30V N-Channel MOSFET 30V N-Channel MOSFET SOT-23 TSM3400 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 28 @ VGS = 10V 30 33 @ VGS = 4.5V 52 @ VGS = 2.5V ID (A) 5.8 5.0 4.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low	Taiwan Semiconductor Company

TSM3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM3404	30V N-Channel MOSFET TSM3404 30V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 30 @ VGS = 10V 43 @ VGS = 4.5V ID (A) 5.8 5.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low	Taiwan Semiconductor Company
TSM3916	(TSM3914 / TSM3915 Series) Integrated Bar Graph Displays	Three-Five
TSM35N10CP	100V N-Channel Power MOSFET TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)	Taiwan Semiconductor

Esta página es del resultado de búsqueda del TSM3400. Si pulsa el resultado de búsqueda de TSM3400 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap