TSM2N70
Taiwan Semiconductor Company
60V N-Channel Enhancement Mode MOSFETTSM2N7000
Pin assignment: 1. Gate 2. Source 3. Drain
60V N-Channel Enhancement Mode MOSFET
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS techn
TSM2N7000
Taiwan Semiconductor Company
60V N-Channel Enhancement Mode MOSFETTSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technolo
TSM2N7000K
Taiwan Semiconductor Company
60V N-Channel MOSFETTSM2N7000K
60V N-Channel MOSFET
TO-92
Pin Definition: 1. Source 2. Gate 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 5 @ VGS = 10V 5.5 @ VGS = 5V
ID (mA)
100 100
Features
● ● ● ● Low On-Resistance ESD Protection High Speed Swi
TSM2N7002
Taiwan Semiconductor Company
60V N-Channel Enhancement Mode MOSFETTSM2N7002
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω
Features
Advanced trench process technology High de
TSM2N7002E
Taiwan Semiconductor Company
50V N-Channel Enhancement Mode MOSFETTSM2N7002E
50V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω
Features
Advanced trench process technology High density
TSM2N7002K
Taiwan Semiconductor Company
60V N-Channel MOSFETTSM2N7002K
60V N-Channel MOSFET
SOT-23 SOT-323
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Protected 2KV Hi
TSM2N7002KD
Taiwan Semiconductor
60V N-Channel MOSFETTSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Pro