TSM2832
Taiwan Semiconductor Company
20V N-Channel Enhancement Mode MOSFETTSM2832
20V N-Channel Enhancement Mode MOSFET
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ
Pin assignment: 1. Gate 2. Drain 3. Source
Features
Advanced trench process technology High densi
TSM2831
20V P-Channel Enhancement Mode MOSFETTSM2831
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Drain 3. Source
VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ
Features
Advanced trench process technology High density cell design for ultra low o
Taiwan Semiconductor Company
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