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TSM2328 100V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) 100 250 Qg 11.1 Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.) ● High performance trench technology Ordering Inf
TSM2321 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ Features Advanced trench process technology High density cell design for ultra lo
TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ Features Advanced trench process technology High density cell design for ultra low on-re
40V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain TSM2318 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 45 @ VGS = 10V 62.5 @ VGS = 4.5V ID (A) 3.9 3.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Blo
30V N-Channel MOSFET SOT-23 TSM2306 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 57 @ VGS =10V 94 @ VGS =4.5V ID (A) 3.5 2.8 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block
TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS =-4.5V ID (A) -1.3 -1.1 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● P
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