TSM2307CX
Taiwan Semiconductor
30V P-Channel MOSFETTSM2307CX
30V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
-30 95 140
Qg 10
Unit V mΩ
nC
Features
● Advance Trench Process Technology ● Hi
TSM2307
30V P-Channel MOSFET30V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
TSM2307
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 80 @ VGS = -10V 140 @ VGS = -4.5V
ID (A)
-3 -2
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Blo
Taiwan Semiconductor Company
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