Datasheet TSM210N02CX Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM210N02CX	N-Channel Power MOSFET / Transistor TSM210N02CX 20V N-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V 20 21 25 32 Qg 5.8 Unit V mΩ nC Ordering Information Part No. Package Packing TSM210N02CX RFG SOT-23	Taiwan Semiconductor

TSM210N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM210N02CX	N-Channel Power MOSFET / Transistor TSM210N02CX 20V N-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V 20 21 25 32 Qg 5.8 Unit V mΩ nC Ordering Information Part No. Package Packing TSM21	Taiwan Semiconductor
TSM210N06	N-Channel Power MOSFET / Transistor TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID (A) 210 Features ● Advanced Trench Technology ● Low RDS(ON) 3.1mΩ (Max.) ● Low gate charge typical @ 160nC (Typ.) ●	Taiwan Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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