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Datasheet TSM1NB60CP Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM1NB60CP   600V N-Channel Power MOSFET

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced t
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet TSM1NB60CP pdf

TSM1NB6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM1NB60S

600V N-Channel Power MOSFET

TSM1NB60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technolo
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM1NB60CW

600V N-Channel Power MOSFET

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar proc
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor
TSM1NB60CH

600V N-Channel Power MOSFET

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar proc
 Taiwan Semiconductor
Taiwan Semiconductor		 datasheet pdf - Taiwan Semiconductor


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Número de pieza Descripción Fabricantes PDF
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