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Datasheet TSM1NB60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | TSM1NB60 | 600V N-Channel Power MOSFET TSM1NB60
600V N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
10 @ VGS =10V
ID (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced t |
 Taiwan Semiconductor |
 |
| 5 | TSM1NB60CH | 600V N-Channel Power MOSFET TSM1NB60
600V N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
10 @ VGS =10V
ID (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced t |
Taiwan Semiconductor |
|
| 4 | TSM1NB60CP | 600V N-Channel Power MOSFET TSM1NB60
600V N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
10 @ VGS =10V
ID (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced t |
Taiwan Semiconductor |
|
| 3 | TSM1NB60CW | 600V N-Channel Power MOSFET TSM1NB60
600V N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
10 @ VGS =10V
ID (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced t |
Taiwan Semiconductor |
|
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