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TSM1N60L 전자부품 데이터시트



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TSM1N60L  

Taiwan Semiconductor
Taiwan Semiconductor

TSM1N60L

N-Channel Power Enhancement Mode MOSFET

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source TO-252 TO-251 VDS (V) 600 RDS(on)(Ω) 12 @ VGS =10V ID (A) 1 General Description The TSM1N60L is used an advanced termination scheme to p




관련 부품 TSM1N6 상세설명

TSM1N60  

  
N-Channel Power Enhancement Mode MOSFET

TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without d



Taiwan Semiconductor
Taiwan Semiconductor

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TSM1N60S  

  
N-Channel Power Enhancement Mode MOSFET

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 11 @ VGS =10V ID (A) 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability with



Taiwan Semiconductor
Taiwan Semiconductor

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