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Datasheet TSM1N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | TSM1N60 | N-Channel Power Enhancement Mode MOSFET
TSM1N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Drain 3. Source
VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω
General Description
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without d |
 Taiwan Semiconductor |
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| 2 | TSM1N60L | N-Channel Power Enhancement Mode MOSFET
TSM1N60L
600V N-Channel Power MOSFET
PRODUCT SUMMARY
Pin Definition: 1. Gate 2. Drain 3. Source
TO-252
TO-251
VDS (V)
600
RDS(on)(Ω)
12 @ VGS =10V
ID (A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capabil |
Taiwan Semiconductor |
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| 1 | TSM1N60S | N-Channel Power Enhancement Mode MOSFET
TSM1N60S
600V N-Channel Power MOSFET
TO-92
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
11 @ VGS =10V
ID (A)
0.3
General Description
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability with |
Taiwan Semiconductor |
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