TSM1412
Taiwan Semiconductor Company
20V N-Channel MOSFETPreliminary
20V N-Channel MOSFET
SOT-363
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
TSM1412
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
34 @ VGS = 4.5V 20 38 @ VGS = 2.5V 44 @ VGS = 2.0V
ID (A)
3 3 3
Features
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TSM1426
30V N-Channel MOSFETPreliminary
30V N-Channel MOSFET
SOT-363
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
TSM1426
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 75 @ VGS = 10V 115 @ VGS = 4.5V
ID (A)
3.6 2.9
Features
● ● Advance Trench Process Technology PWM Optimized
Bl
Taiwan Semiconductor Company
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