TSM12N65
Taiwan Semiconductor
650V N-Channel Power MOSFETTSM12N65
650V N-Channel Power MOSFET
ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
650
RDS(on)(Ω)
0.8 @ VGS =10V
ID (A)
6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe D
TSM12N02
20V N-Channel MOSFETTSM12N02
20V N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 30 @ VGS = 10V 40 @ VGS = 4.5V
TO-252
Pin Definition: 1. Gate 2. Drain 3. Source
ID (A)
8 6
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
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Taiwan Semiconductor
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