TSM10P06CP
Taiwan Semiconductor
60V P-Channel MOSFETTSM10P06
60V P-Channel MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
-60 220 @ VGS = -4.5V -2
RDSON (mΩ)
170 @ VGS = -10V
ID (A)
-5
Features
● ● Advance Trench Process Technology High Density Cell Design for
TSM10P06
60V P-Channel MOSFETTSM10P06
60V P-Channel MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
-60 220 @ VGS = -4.5V -2
RDSON (mΩ)
170 @ VGS = -10V
ID (A)
-5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Taiwan Semiconductor
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